MMFTP84PGK
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP84PGK
MOSFET, DFN1006-3, P, -50V, -0.23A, 7.5Ω, 150°C
Minimum order quantity 10.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free No
Halogen free No

Downloads & Links

Distributor Availability

Technical data

Article number MMFTP84PGK
MMFTP84PGK Single Protected
Type SMD
Package DFN1006-3
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS -50 V
Drain current 25°C ID -0.230 A
On-resistance 1 RDSon1 7.50000 Ω
@ ID -0.100 A
@ VGS -10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.00000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 2.700 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM -0.900 A
@ tp 10 µs
Threshold voltage VGSth min -1.1 V
VGSth max -2.1 V
Turn-on delay time tD(on) 25 ns
Rise time tr 11 ns
Turn-off delay time tD(off) 95 ns
Fall time tf 23 ns
Total gate charge (10V) Qg (10V) 0.4 nC
Total gate charge (4.5V) Qg (4.5V) 0.0 nC
Gate-drain charge Qgd 0.1 nC
Single pulse avalanche energy Eas 0 mJ
Input capacitance Ciss 36 pF
Output capacitance Coss 4 pF
Reverse transfer capacitance Crss 1 pF
Reverse recovery charge Qrr 0 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.001 g
Marking Marking 0
Thermal resistance junction RTH 278 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS -10 µA
@ VGS -20 V
Drain source leakage current IDSS 1 µA
@ VDS -50 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 1000 V
Forward transconductance gfs 150 mA/V
Intrinsic gate resistance RGi 0.0 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample