MMFTP84PGK
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP84PGK MOSFET, DFN1006-3, P, -50V, -0.23A, 7.5Ω, 150°C
Minimum order quantity	10.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	No

Article number	MMFTP84PGK

Type	SMD
Package	DFN1006-3
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	-50 V

Drain current 25°C	ID	-0.230 A
On-resistance 1	RDSon1	7.50000 Ω
	@ ID	-0.100 A
	@ VGS	-10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.00000 Ω
	@ ID	0.000 A
	@ VGS	0 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	2.700 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	-0.900 A
	@ tp	10 µs
Threshold voltage	VGSth min	-1.1 V
	VGSth max	-2.1 V
Turn-on delay time	tD(on)	25 ns
Rise time	tr	11 ns
Turn-off delay time	tD(off)	95 ns
Fall time	tf	23 ns
Total gate charge (10V)	Qg (10V)	0.4 nC
Total gate charge (4.5V)	Qg (4.5V)	0.0 nC
Gate-drain charge	Qgd	0.1 nC
Single pulse avalanche energy	Eas	0 mJ
Input capacitance	Ciss	36 pF
Output capacitance	Coss	4 pF
Reverse transfer capacitance	Crss	1 pF
Reverse recovery charge	Qrr	0 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.001 g
Marking	Marking	0
Thermal resistance junction	RTH	278 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	-10 µA
	@ VGS	-20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	-50 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	1000 V
Forward transconductance	gfs	150 mA/V
Intrinsic gate resistance	RGi	0.0 Ω