DIH005N06-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIH005N06-AQ
MOSFET, SOT-23, N, 60V, 5.5A , 0.13Ω, 175°C, AEC-Q101
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DIH005N06-AQ
DIH005N06-AQ Single
Type SMD
Package SOT-223
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 60 V
Drain current 25°C ID 5.5 A
On-resistance 1 RDSon1 0.13 Ω
@ ID 2 A
@ VGS 10 V
Drain current 100°C ID 3.8 A
On-resistance 2 RDSon2 0.16 Ω
@ ID 1 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 10 W
@ TLoc 25 °C
Location ambient
Avalanche Yes
Peak drain current IDM 22 A
@ tp null µs
Threshold voltage VGSth min 1 V
VGSth max 2 V
Turn-on delay time tD(on) 7 ns
Rise time tr 3 ns
Turn-off delay time tD(off) 7 ns
Fall time tf 6 ns
Total gate charge (10V) Qg (10V) 9 nC
Total gate charge (4.5V) Qg (4.5V) 4.3 nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas 6 mJ
Input capacitance Ciss 362 pF
Output capacitance Coss 23 pF
Reverse transfer capacitance Crss 18 pF
Reverse recovery charge Qrr 7.3 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking Type
Thermal resistance junction RTH 15 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 80 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 60 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 4 mA/V
Intrinsic gate resistance RGi 1.1 Ω

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