DIH005N06-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DIH005N06-AQ MOSFET, SOT-23, N, 60V, 5.5A , 0.13Ω, 175°C, AEC-Q101
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DIH005N06-AQ

Type	SMD
Package	SOT-223
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	Yes
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	5.5 A
On-resistance 1	RDSon1	0.13 Ω
	@ ID	2 A
	@ VGS	10 V
Drain current 100°C	ID	3.8 A
On-resistance 2	RDSon2	0.16 Ω
	@ ID	1 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	10 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	Yes
Peak drain current	IDM	22 A
	@ tp	null µs
Threshold voltage	VGSth min	1 V
	VGSth max	2 V
Turn-on delay time	tD(on)	7 ns
Rise time	tr	3 ns
Turn-off delay time	tD(off)	7 ns
Fall time	tf	6 ns
Total gate charge (10V)	Qg (10V)	9 nC
Total gate charge (4.5V)	Qg (4.5V)	4.3 nC
Gate-drain charge	Qgd	2 nC
Single pulse avalanche energy	Eas	6 mJ
Input capacitance	Ciss	362 pF
Output capacitance	Coss	23 pF
Reverse transfer capacitance	Crss	18 pF
Reverse recovery charge	Qrr	7.3 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	Type
Thermal resistance junction	RTH	15 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	80 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	4 mA/V
Intrinsic gate resistance	RGi	1.1 Ω