2N7000
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description 2N7000
MOSFET, TO-92, N, 60V, 0.2A, 5Ω, 150°C
Minimum order quantity 4.000
Stock 12.000
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number 2N7000
2N7000 Single
Type Wire-lead
Package TO-92
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 60 V
Drain current 25°C ID 0.2 A
On-resistance 1 RDSon1 5 Ω
@ ID 0.5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 6 Ω
@ ID 0.075 A
@ VGS 4.5 V
Junction temperature Tjmin 150 °C
Tjmax 150 °C
Power dissipation Ptot 0.35 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM 0.5 A
@ tp 50 µs
Threshold voltage VGSth min 0.8 V
VGSth max 3 V
Turn-on delay time tD(on) 10 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 10 ns
Fall time tf 10 ns
Total gate charge (10V) Qg (10V) null nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd null nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 60 pF
Output capacitance Coss 25 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr null nC
Case flammability UL94-V0 Yes
Net weight mnet 0.18 g
Marking Marking Type
Thermal resistance junction RTH 357 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.01 µA
@ VGS 15 V
Drain source leakage current IDSS 1 µA
@ VDS 48 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 40 V
Forward transconductance gfs 100 mA/V
Intrinsic gate resistance RGi null Ω

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