2N7000
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	2N7000 MOSFET, TO-92, N, 60V, 0.2A, 5Ω, 150°C
Minimum order quantity	4.000
Stock	12.000
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	2N7000

Type	Wire-lead
Package	TO-92
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	n/a

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	60 V

Drain current 25°C	ID	0.2 A
On-resistance 1	RDSon1	5 Ω
	@ ID	0.5 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	6 Ω
	@ ID	0.075 A
	@ VGS	4.5 V
Junction temperature	Tjmin	150 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.35 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	0.5 A
	@ tp	50 µs
Threshold voltage	VGSth min	0.8 V
	VGSth max	3 V
Turn-on delay time	tD(on)	10 ns
Rise time	tr	10 ns
Turn-off delay time	tD(off)	10 ns
Fall time	tf	10 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	null nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	60 pF
Output capacitance	Coss	25 pF
Reverse transfer capacitance	Crss	5 pF
Reverse recovery charge	Qrr	null nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.18 g
Marking	Marking	Type
Thermal resistance junction	RTH	357 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.01 µA
	@ VGS	15 V
Drain source leakage current	IDSS	1 µA
	@ VDS	48 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	40 V
Forward transconductance	gfs	100 mA/V
Intrinsic gate resistance	RGi	null Ω