MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection

Article number	Type	Package	Qualification	Config	Life Cycle	ESD protected ESD protection	pol Polarity	VDS [V] Drain source voltage	ID [A] Drain current 25°C	RDSon1 [Ω] On-resistance 1	@ ID [A] On-resistance 1	@ VGS [V] On-resistance 1	ID [A] Drain current 100°C	RDSon2 [Ω] On-resistance 2	@ ID [A] On-resistance 2	@ VGS [V] On-resistance 2	Tjmin [°C] Junction temperature	Tjmax [°C] Junction temperature	Ptot [W] Power dissipation	@ TLoc [°C] Power dissipation	Location Power dissipation	Avalanche Avalanche	IDM [A] Peak drain current	@ tp [µs] Peak drain current	VGSth min [V] Threshold voltage	VGSth max [V] Threshold voltage	tD(on) [ns] Turn-on delay time	tr [ns] Rise time	tD(off) [ns] Turn-off delay time	tf [ns] Fall time	Qg (10V) [nC] Total gate charge (10V)	Qg (4.5V) [nC] Total gate charge (4.5V)	Qgd [nC] Gate-drain charge	Eas [mJ] Single pulse avalanche energy	Ciss [pF] Input capacitance	Coss [pF] Output capacitance	Crss [pF] Reverse transfer capacitance	Qrr [nC] Reverse recovery charge	UL94-V0 Case flammability	mnet [g] Net weight	Marking Marking	RTH [K/W] Thermal resistance junction	Location Thermal resistance junction	UL-Recognition UL recognized	RTH [K/W] Thermal resistance junction (b)	Location Thermal resistance junction (b)	Tsmin [°C] Storage temperature	Tsmax [°C] Storage temperature	Solder & Assembly Solder & Assembly	IGSS [µA] Gate source leakage current	@ VGS [V] Gate source leakage current	IDSS [µA] Drain source leakage current	@ VDS [V] Drain source leakage current	VGSS [V] Gate source voltage DC	VGSS [V] Gate source voltage ESD	gfs [mA/V] Forward transconductance	RGi [Ω] Intrinsic gate resistance

最后更新: 2026-09-09 00:16:06 UTC+1

MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection

MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection