MMFTP2333-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP2333-AQ
MOSFET, SOT-23, P, -15V, -5,8A, 24mΩ, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTP2333-AQ
MMFTP2333-AQ Single
Type SMD
Package SOT-23
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -15 V
Drain current 25°C ID -5.800 A
On-resistance 1 RDSon1 0.02400 Ω
@ ID -3.000 A
@ VGS -4.5 V
Drain current 100°C ID
On-resistance 2 RDSon2 -0.03100 Ω
@ ID -2.000 A
@ VGS -2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.000 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -30.000 A
@ tp 1 µs
Threshold voltage VGSth min 0.4 V
VGSth max 1 V
Turn-on delay time tD(on) 12 ns
Rise time tr 42 ns
Turn-off delay time tD(off) 29 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 0.0 nC
Total gate charge (4.5V) Qg (4.5V) 10.7 nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas
Input capacitance Ciss 898 pF
Output capacitance Coss 163 pF
Reverse transfer capacitance Crss 135 pF
Reverse recovery charge Qrr 3.0 nC
Case flammability UL94-V0 No
Net weight mnet 0.01 g
Marking Marking Type
Thermal resistance junction RTH 125.0 K/W
Location ambient
UL recognized UL-Recognition
Thermal resistance junction (b) RTH
Location
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 12 V
Drain source leakage current IDSS 1 µA
@ VDS -15 V
Gate source voltage DC VGSS 12 V
Gate source voltage ESD VGSS
Forward transconductance gfs 13 mA/V
Intrinsic gate resistance RGi 10.8 Ω

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