MMFTP2333-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MMFTP2333-AQ
MOSFET, SOT-23, P, -15V, -5,8A, 24mΩ, 150°C, AEC-Q101
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MMFTP2333-AQ
MMFTP2333-AQ Single
Type SMD
Package SOT-23
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -15 V
Drain current 25°C ID -5.800 A
On-resistance 1 RDSon1 0.02400 Ω
@ ID -3.000 A
@ VGS -4.5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 -0.03100 Ω
@ ID -2.000 A
@ VGS -2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 1.000 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -30.000 A
@ tp 1 µs
Threshold voltage VGSth min 0.4 V
VGSth max 1 V
Turn-on delay time tD(on) 12 ns
Rise time tr 42 ns
Turn-off delay time tD(off) 29 ns
Fall time tf 13 ns
Total gate charge (10V) Qg (10V) 0.0 nC
Total gate charge (4.5V) Qg (4.5V) 10.7 nC
Gate-drain charge Qgd 3 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 898 pF
Output capacitance Coss 163 pF
Reverse transfer capacitance Crss 135 pF
Reverse recovery charge Qrr 3.0 nC
Case flammability UL94-V0 No
Net weight mnet 0.01 g
Marking Marking Type
Thermal resistance junction RTH 125.0 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 12 V
Drain source leakage current IDSS 1 µA
@ VDS -15 V
Gate source voltage DC VGSS 12 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 13 mA/V
Intrinsic gate resistance RGi 10.8 Ω

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