MMFTP2333-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP2333-AQ MOSFET, SOT-23, P, -15V, -5,8A, 24mΩ, 150°C, AEC-Q101
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTP2333-AQ

Type	SMD
Package	SOT-23
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	Yes
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-15 V

Drain current 25°C	ID	-5.800 A
On-resistance 1	RDSon1	0.02400 Ω
	@ ID	-3.000 A
	@ VGS	-4.5 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	-0.03100 Ω
	@ ID	-2.000 A
	@ VGS	-2.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1.000 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	-30.000 A
	@ tp	1 µs
Threshold voltage	VGSth min	0.4 V
	VGSth max	1 V
Turn-on delay time	tD(on)	12 ns
Rise time	tr	42 ns
Turn-off delay time	tD(off)	29 ns
Fall time	tf	13 ns
Total gate charge (10V)	Qg (10V)	0.0 nC
Total gate charge (4.5V)	Qg (4.5V)	10.7 nC
Gate-drain charge	Qgd	3 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	898 pF
Output capacitance	Coss	163 pF
Reverse transfer capacitance	Crss	135 pF
Reverse recovery charge	Qrr	3.0 nC
Case flammability	UL94-V0	No
Net weight	mnet	0.01 g
Marking	Marking	Type
Thermal resistance junction	RTH	125.0 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	12 V
Drain source leakage current	IDSS	1 µA
	@ VDS	-15 V
Gate source voltage DC	VGSS	12 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	13 mA/V
Intrinsic gate resistance	RGi	10.8 Ω