MDE0A25N020K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MDE0A25N020K
MOSFET, SOT-563 Dual, N+N, 20 V, 0.25A, 1.1 Ω, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number MDE0A25N020K
MDE0A25N020K Dual protected
Type SMD
Package SOT-563
Qualification Industrial Grade
Config Dual protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N+N
Drain source voltage VDS 20 V
Drain current 25°C ID 0.250 A
On-resistance 1 RDSon1 1.10000 Ω
@ ID 0.150 A
@ VGS 4.5 V
Drain current 100°C ID 2.500 A
On-resistance 2 RDSon2
@ ID
@ VGS
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.150 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM 0.600 A
@ tp null µs
Threshold voltage VGSth min 0.4 V
VGSth max 1.0 V
Turn-on delay time tD(on) 7 ns
Rise time tr 5 ns
Turn-off delay time tD(off) 17 ns
Fall time tf 7 ns
Total gate charge (10V) Qg (10V) 0.9 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 0.2 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 79 pF
Output capacitance Coss 13 pF
Reverse transfer capacitance Crss 9 pF
Reverse recovery charge Qrr null nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking TBA
Thermal resistance junction RTH 278.0 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 10 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 10 V
Gate source voltage ESD VGSS TBA V
Forward transconductance gfs 1 mA/V
Intrinsic gate resistance RGi TBA Ω

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