MDE001P020
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description MDE001P020
MOSFET, SOT-563, P, -20V, -1A, 150mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free No
Halogen free No

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Technical data

Article number MDE001P020
MDE001P020 Single
Type SMD
Package SOT-563
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -20 V
Drain current 25°C ID -1 A
On-resistance 1 RDSon1 0.15 Ω
@ ID 0.95 A
@ VGS -4.5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.2 Ω
@ ID 0.67 A
@ VGS -2.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.35 W
@ TLoc 25 °C
Location ambient
Avalanche No
Peak drain current IDM -4 A
@ tp null µs
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 7.5 ns
Rise time tr 44 ns
Turn-off delay time tD(off) 36 ns
Fall time tf 14 ns
Total gate charge (10V) Qg (10V) null nC
Total gate charge (4.5V) Qg (4.5V) 2.2 nC
Gate-drain charge Qgd 0.5 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 170 pF
Output capacitance Coss 32 pF
Reverse transfer capacitance Crss 20 pF
Reverse recovery charge Qrr null nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking PF
Thermal resistance junction RTH 357 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 12 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 12 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 3 mA/V
Intrinsic gate resistance RGi null Ω

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