DIT195N08
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT195N08
MOSFET, TO-220AB, N, 85V, 195A, 3.5mΩ, 175°C
Minimum order quantity 1.000
Stock 283
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT195N08
DIT195N08 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 85 V
Drain current 25°C ID 195 A
On-resistance 1 RDSon1 0.0035 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 140 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 300 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 850 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 62 ns
Rise time tr 66 ns
Turn-off delay time tD(off) 92 ns
Fall time tf 35 ns
Total gate charge (10V) Qg (10V) 296 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 78 nC
Single pulse avalanche energy Eas 2880 mJ
Input capacitance Ciss 16880 pF
Output capacitance Coss 863 pF
Reverse transfer capacitance Crss 730 pF
Reverse recovery charge Qrr 210 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 0.428 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 85 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 70 mA/V
Intrinsic gate resistance RGi tbd Ω

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