DIT110P06
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT110P06
MOSFET, TO-220AB, P, 60V, 110A, 7mΩ, 150°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT110P06
DIT110P06 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -60 V
Drain current 25°C ID -110 A
On-resistance 1 RDSon1 0.007 Ω
@ ID -15 A
@ VGS -10 V
Drain current 100°C ID -70 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 180 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM -440 A
@ tp 10000000 µs
Threshold voltage VGSth min -1.6 V
VGSth max -2.4 V
Turn-on delay time tD(on) 21 ns
Rise time tr 44 ns
Turn-off delay time tD(off) 72 ns
Fall time tf 61 ns
Total gate charge (10V) Qg (10V) 80 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 11 nC
Single pulse avalanche energy Eas 882 mJ
Input capacitance Ciss 5403 pF
Output capacitance Coss 941 pF
Reverse transfer capacitance Crss 48 pF
Reverse recovery charge Qrr 0 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 0.69 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 60 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 60 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBA mA/V
Intrinsic gate resistance RGi 2 Ω

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