DIT045N10
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DIT045N10
MOSFET, TO-220AB, N, 100V, 45A, 20mΩ, 150°C
Minimum order quantity 1.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DIT045N10
DIT045N10 Single
Type Wire-lead
Package TO-220AB
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL n/a
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 45 A
On-resistance 1 RDSon1 0.02 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 29 A
On-resistance 2 RDSon2 0 Ω
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 73 W
@ TLoc 25 °C
Location Junction
Avalanche Yes
Peak drain current IDM 180 A
@ tp null µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 10 ns
Rise time tr 5 ns
Turn-off delay time tD(off) 19 ns
Fall time tf 6 ns
Total gate charge (10V) Qg (10V) 21 nC
Total gate charge (4.5V) Qg (4.5V) 0 nC
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas 80 mJ
Input capacitance Ciss 1020 pF
Output capacitance Coss 235 pF
Reverse transfer capacitance Crss 9 pF
Reverse recovery charge Qrr 0 nC
Case flammability UL94-V0 Yes
Net weight mnet 2.2 g
Marking Marking Type
Thermal resistance junction RTH 1.71 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 58 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 38 mA/V
Intrinsic gate resistance RGi 2.3 Ω

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