DIT045N10
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DIT045N10 MOSFET, TO-220AB, N, 100V, 45A, 20mΩ, 150°C
Minimum order quantity	1.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	declarable
Lead free	No
Halogen free	No

Article number	DIT045N10

Type	Wire-lead
Package	TO-220AB
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	n/a

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	45 A
On-resistance 1	RDSon1	0.02 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	29 A
On-resistance 2	RDSon2	0 Ω
	@ ID	0 A
	@ VGS	0 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	73 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	Yes
Peak drain current	IDM	180 A
	@ tp	null µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	10 ns
Rise time	tr	5 ns
Turn-off delay time	tD(off)	19 ns
Fall time	tf	6 ns
Total gate charge (10V)	Qg (10V)	21 nC
Total gate charge (4.5V)	Qg (4.5V)	0 nC
Gate-drain charge	Qgd	6 nC
Single pulse avalanche energy	Eas	80 mJ
Input capacitance	Ciss	1020 pF
Output capacitance	Coss	235 pF
Reverse transfer capacitance	Crss	9 pF
Reverse recovery charge	Qrr	0 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	2.2 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.71 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	58 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	100 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	38 mA/V
Intrinsic gate resistance	RGi	2.3 Ω