DID3A2N65
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DID3A2N65
MOSFET, IPAK, N, 650V, 3.2A, 2.6Ω, 150°C
Minimum order quantity 6.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DID3A2N65
DID3A2N65 Single
Type SMD
Package TO-251/I-PAK
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 3.2 A
On-resistance 1 RDSon1 2.6 Ω
@ ID 2 A
@ VGS 10 V
Drain current 100°C ID 2 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 54 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 16 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 45 ns
Rise time tr 100 ns
Turn-off delay time tD(off) 200 ns
Fall time tf 130 ns
Total gate charge (10V) Qg (10V) 25 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 20 nC
Single pulse avalanche energy Eas 180 mJ
Input capacitance Ciss 581 pF
Output capacitance Coss 63 pF
Reverse transfer capacitance Crss 11 pF
Reverse recovery charge Qrr 370 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.51 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 30 V
Drain source leakage current IDSS 1 µA
@ VDS 650 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 2.7 mA/V
Intrinsic gate resistance RGi 1.9 Ω

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