DI3A0N90D1K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI3A0N90D1K
MOSFET, DPAK, N, 900V, 3A, 1.5Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI3A0N90D1K
DI3A0N90D1K Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 900 V
Drain current 25°C ID 3 A
On-resistance 1 RDSon1 1.5 Ω
@ ID 0.9 A
@ VGS 10 V
Drain current 100°C ID 1.5 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin null °C
Tjmax null °C
Power dissipation Ptot 31 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM 7 A
@ tp null µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 26 ns
Rise time tr 21 ns
Turn-off delay time tD(off) 25 ns
Fall time tf 98 ns
Total gate charge (10V) Qg (10V) 11 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 4 nC
Single pulse avalanche energy Eas null mJ
Input capacitance Ciss 457 pF
Output capacitance Coss 11 pF
Reverse transfer capacitance Crss 2 pF
Reverse recovery charge Qrr 1600 nC
Case flammability UL94-V0 Yes
Net weight mnet null g
Marking Marking null
Thermal resistance junction RTH null K/W
Location null
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin null °C
Tsmax null °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS null µA
@ VGS null V
Drain source leakage current IDSS null µA
@ VDS null V
Gate source voltage DC VGSS null V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null Ω

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