DI320N04TL-AQ
MOSFETs (Field Effect Transistors)

Downloads & Links
Technical data
Related products
News and Updates
Request sample

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI320N04TL-AQ
MOSFET, TOLL, N, 40V, 330A, 1.25mΩ, 175°C, AEC-Q101
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free Yes
Halogen free Yes

Downloads & Links

Distributor Availability

Technical data

Article number DI320N04TL-AQ
DI320N04TL-AQ Single
Type SMD
Package HSOF-8/TOLL
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 330.000 A
On-resistance 1 RDSon1 0.00125 Ω
@ ID 20.000 A
@ VGS 10 V
Drain current 100°C ID 226.000 A
On-resistance 2 RDSon2 0.00000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 230.000 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 1280.000 A
@ tp 100 µs
Threshold voltage VGSth min 2.0 V
VGSth max 4.0 V
Turn-on delay time tD(on) 4.4 ns
Rise time tr 21.0 ns
Turn-off delay time tD(off) 40.0 ns
Fall time tf 19.0 ns
Total gate charge (10V) Qg (10V) 73.0 nC
Total gate charge (4.5V) Qg (4.5V)
Gate-drain charge Qgd 12 nC
Single pulse avalanche energy Eas 421.0 mJ
Input capacitance Ciss 5654 pF
Output capacitance Coss 3337 pF
Reverse transfer capacitance Crss 99 pF
Reverse recovery charge Qrr 110.0 nC
Case flammability UL94-V0 No
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.7 K/W
Location case
UL recognized UL-Recognition
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS
Forward transconductance gfs 63 mA/V
Intrinsic gate resistance RGi 2.1 Ω

News and Updates

  • Filter:

Application Reference Diagrams

No records found.

Request sample