DI300N08TL
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI300N08TL
MOSFET, TOLL, N, 80V, 300A, 1.2mΩ, 175°C
Minimum order quantity 2.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI300N08TL
DI300N08TL Single
Type SMD
Package HSOF-8/TOLL
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 80 V
Drain current 25°C ID 300 A
On-resistance 1 RDSon1 0.0012 Ω
@ ID 100 A
@ VGS 10 V
Drain current 100°C ID 1200 A
On-resistance 2 RDSon2 0.0017 Ω
@ ID 100 A
@ VGS 6 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 214.2 W
@ TLoc 175 °C
Location Junction
Avalanche No
Peak drain current IDM 1200 A
@ tp 100 µs
Threshold voltage VGSth min 1 V
VGSth max 3 V
Turn-on delay time tD(on) 93 ns
Rise time tr 145 ns
Turn-off delay time tD(off) 98 ns
Fall time tf 32 ns
Total gate charge (10V) Qg (10V) 34.3 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 92 nC
Single pulse avalanche energy Eas 1676.9 mJ
Input capacitance Ciss 16964 pF
Output capacitance Coss 3142 pF
Reverse transfer capacitance Crss 441 pF
Reverse recovery charge Qrr 353 nC
Case flammability UL94-V0 Yes
Net weight mnet 2 g
Marking Marking Type
Thermal resistance junction RTH 0.7 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 64 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 117.5 mA/V
Intrinsic gate resistance RGi 1.5 Ω

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