DI2A2N100D1K
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI2A2N100D1K Gate Protected
MOSFET, DPAK, N, 1000V, 2.2A, 6.8Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI2A2N100D1K
DI2A2N100D1K Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single Protected
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 1000 V
Drain current 25°C ID 2.2 A
On-resistance 1 RDSon1 6.8 Ω
@ ID 1.5 A
@ VGS 10 V
Drain current 100°C ID 1.4 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 29.7 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 8 A
@ tp 10000 µs
Threshold voltage VGSth min 3 V
VGSth max 4 V
Turn-on delay time tD(on) 36 ns
Rise time tr 14 ns
Turn-off delay time tD(off) 92 ns
Fall time tf 44 ns
Total gate charge (10V) Qg (10V) 25 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 15 nC
Single pulse avalanche energy Eas 125 mJ
Input capacitance Ciss 510 pF
Output capacitance Coss 54 pF
Reverse transfer capacitance Crss 11 pF
Reverse recovery charge Qrr 1.5 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 4.2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 63 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 2 µA
@ VDS 520 V
Gate source voltage DC VGSS 25 V
Gate source voltage ESD VGSS 2000 V
Forward transconductance gfs tbd mA/V
Intrinsic gate resistance RGi 8 Ω

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