DI200N04PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI200N04PQ
MOSFET, PowerQFN 5x6, N, 40V, 200A, 1.3mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI200N04PQ
DI200N04PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 40 V
Drain current 25°C ID 200 A
On-resistance 1 RDSon1 0.0013 Ω
@ ID 100 A
@ VGS 10 V
Drain current 100°C ID 165 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 180 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 800 A
@ tp 10000 µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 14 ns
Rise time tr 8 ns
Turn-off delay time tD(off) 57 ns
Fall time tf 10 ns
Total gate charge (10V) Qg (10V) 92 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 18 nC
Single pulse avalanche energy Eas 1800 mJ
Input capacitance Ciss 5768 pF
Output capacitance Coss 2315 pF
Reverse transfer capacitance Crss 69 pF
Reverse recovery charge Qrr 120 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 0.69 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 40 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 40 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 87 mA/V
Intrinsic gate resistance RGi null Ω

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