DI1A0N60D1-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI1A0N60D1-AQ
MOSFET, DPAK, N, 600V, 1.0A, 8.4Ω, 150°C, AEC-Q101
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI1A0N60D1-AQ
DI1A0N60D1-AQ Single Protected
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 600 V
Drain current 25°C ID 1 A
On-resistance 1 RDSon1 8.4 Ω
@ ID 0.5 A
@ VGS 10 V
Drain current 100°C ID 0.63 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS null V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 25 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 2.5 A
@ tp null µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 8 ns
Rise time tr 14 ns
Turn-off delay time tD(off) 14 ns
Fall time tf 104 ns
Total gate charge (10V) Qg (10V) 4.3 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 2.3 nC
Single pulse avalanche energy Eas 43.5 mJ
Input capacitance Ciss 121 pF
Output capacitance Coss 8 pF
Reverse transfer capacitance Crss 5.3 pF
Reverse recovery charge Qrr 0.23 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 5 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 100 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 24 V
Drain source leakage current IDSS 1 µA
@ VDS 480 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 0.7 mA/V
Intrinsic gate resistance RGi null Ω

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