DI180N10PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI180N10PQ
MOSFET, PowerQFN 5x6, N, 100V, 180A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI180N10PQ
DI180N10PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 180.000 A
On-resistance 1 RDSon1 0.00260 Ω
@ ID 90.000 A
@ VGS 10 V
Drain current 100°C ID 114.000 A
On-resistance 2 RDSon2 0.00000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 227.000 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 720.000 A
@ tp 100 µs
Threshold voltage VGSth min 2.5 V
VGSth max 3.5 V
Turn-on delay time tD(on) 36 ns
Rise time tr 39 ns
Turn-off delay time tD(off) 34 ns
Fall time tf 16 ns
Total gate charge (10V) Qg (10V) 79.3 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 16.5 nC
Single pulse avalanche energy Eas 444.0 mJ
Input capacitance Ciss 5370 pF
Output capacitance Coss 1795 pF
Reverse transfer capacitance Crss 26 pF
Reverse recovery charge Qrr 180.0 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 0.6 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 101.9 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi 0.6 Ω

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