DI110N10PQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI110N10PQ
MOSFET, PowerQFN 5x6, N, 100V, 110A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption
REACH not declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI110N10PQ
DI110N10PQ Single
Type SMD
Package PowerQFN 5x6
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 100 V
Drain current 25°C ID 110 A
On-resistance 1 RDSon1 0 Ω
@ ID 0 A
@ VGS 0 V
Drain current 100°C ID 0 A
On-resistance 2 RDSon2 0.006 Ω
@ ID 30 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 113.6 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 380 A
@ tp 10000 µs
Threshold voltage VGSth min 1 V
VGSth max 2.5 V
Turn-on delay time tD(on) 15.4 ns
Rise time tr 13 ns
Turn-off delay time tD(off) 34 ns
Fall time tf 6.2 ns
Total gate charge (10V) Qg (10V) 75 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 13 nC
Single pulse avalanche energy Eas 205 mJ
Input capacitance Ciss 4400 pF
Output capacitance Coss 645 pF
Reverse transfer capacitance Crss 20 pF
Reverse recovery charge Qrr 101 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 1.1 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 58 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi 1.7 Ω

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