DI1003PQ-AQ
Bipolar Transistors

Product information

Product family Bipolar Transistors
Control and signal processing
Article description DI1003PQ-AQ
BJT, QFN5x6, 100V, 3000mA, NPN, 2.5W, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free Yes

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Technical data

Article number DI1003PQ-AQ
DI1003PQ-AQ Single
Type SMD
Package PowerQFN 5x6
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
Collector Emitter voltage VCEO 100 V
DC Collector current IC 3000 mA
Polarity pol NPN
Power dissipation Ptot 2.500 W
@ TLoc 25 °C
Location Ambient
DC current gain hfe 150
@ VCE 10 V
@ IC 150 mA
DC current gain (b) hfe 80
@ VCE 10 V
@ IC 1000 mA
DC current gain (c) hfe 20
@ VCE 10 V
@ IC 2000 mA
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Peak Collector Current ICM 6 A
Peak Base current IBM 500 mA
Collector Base voltage VCBO 100 V
Emitter Base voltage VEBO 7 V
Collector saturation voltage VCEsat 150.0 mV
@ IC 1000 mA
@ IB 50.0 mA
Base saturation voltage VBEsat 1.0 V
@ IC 1000 mA
@ IB 50.0 mA
Base Emitter voltage VBE 1 V
Collector Base cutoff current ICBO 100.0 nA
Emitter Base cutoff current IEBO 100 nA
Gain bandwidth product ft 125.0 MHz
@ IC 100 mA
@ VCE 2 V
@ f 100 MHz
Marking Marking Type
Thermal resistance junction RTH 5.0 K/W
Location Terminal
Thermal resistance junction (b) RTH 120.0 K/W
Location ambient
Net weight mnet 0.040 g
Case flammability UL94-V0 Yes
UL recognized UL-Recognition null
Collector Base capacitance CCBO
@ VCB
Storage temperature Tsmin -55 °C
Tsmax 150 °C

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