DI1003PQ-AQ
Bipolar Transistors

Product information

Product family	Bipolar Transistors Control and signal processing
Article description	DI1003PQ-AQ BJT, QFN5x6, 100V, 3000mA, NPN, 2.5W, 150°C, AEC-Q101
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption 7(a)-I
REACH	declarable
Lead free	No
Halogen free	Yes

Article number	DI1003PQ-AQ

Type	SMD
Package	PowerQFN 5x6
Qualification	AEC-Q101
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

Collector Emitter voltage	VCEO	100 V
DC Collector current	IC	3000 mA
Polarity	pol	NPN

Power dissipation	Ptot	2.500 W
	@ TLoc	25 °C
	Location	Ambient
DC current gain	hfe	150
	@ VCE	10 V
	@ IC	150 mA
DC current gain (b)	hfe	80
	@ VCE	10 V
	@ IC	1000 mA
DC current gain (c)	hfe	20
	@ VCE	10 V
	@ IC	2000 mA
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Peak Collector Current	ICM	6 A
Peak Base current	IBM	500 mA
Collector Base voltage	VCBO	100 V
Emitter Base voltage	VEBO	7 V
Collector saturation voltage	VCEsat	150.0 mV
	@ IC	1000 mA
	@ IB	50.0 mA
Base saturation voltage	VBEsat	1.0 V
	@ IC	1000 mA
	@ IB	50.0 mA
Base Emitter voltage	VBE	1 V
Collector Base cutoff current	ICBO	100.0 nA
Emitter Base cutoff current	IEBO	100 nA
Gain bandwidth product	ft	125.0 MHz
	@ IC	100 mA
	@ VCE	2 V
	@ f	100 MHz
Marking	Marking	Type
Thermal resistance junction	RTH	5.0 K/W
	Location	Terminal
Thermal resistance junction (b)	RTH	120.0 K/W
	Location	ambient
Net weight	mnet	0.040 g
Case flammability	UL94-V0	Yes
UL recognized	UL-Recognition	null
Collector Base capacitance	CCBO
	@ VCB
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C