DI064N20D2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI064N20D2
MOSFET, D2PAK, N, 200V, 64A, 25 mΩ, 150°C
Minimum order quantity 800
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI064N20D2
DI064N20D2 Single
Type SMD
Package TO-263AB/D2PAK
Qualification Commercial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 200 V
Drain current 25°C ID 64 A
On-resistance 1 RDSon1 0.025 Ω
@ ID 40 A
@ VGS 10 V
Drain current 100°C ID 40 A
On-resistance 2 RDSon2 0 Ω
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 227 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 240 A
@ tp 10000 µs
Threshold voltage VGSth min 3 V
VGSth max 5 V
Turn-on delay time tD(on) 31 ns
Rise time tr 60 ns
Turn-off delay time tD(off) 19 ns
Fall time tf 9 ns
Total gate charge (10V) Qg (10V) 72 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 23 nC
Single pulse avalanche energy Eas 256 mJ
Input capacitance Ciss 4077 pF
Output capacitance Coss 240 pF
Reverse transfer capacitance Crss 22 pF
Reverse recovery charge Qrr 505 nC
Case flammability UL94-V0 Yes
Net weight mnet 1.6 g
Marking Marking Type
Thermal resistance junction RTH 0.55 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 35 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 160 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 38 mA/V
Intrinsic gate resistance RGi 1 Ω

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