DI040P04D1-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI040P04D1-AQ
MOSFET, DPAK, P, -40V, -40A, 15mΩ, 150°C, AEC-Q101
Minimum order quantity 2.500
Stock 10.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI040P04D1-AQ
DI040P04D1-AQ Single
Type SMD
Package TO-252AA/D-PAK
Qualification AEC-Q101
Config Single
Life Cycle active
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -40 V
Drain current 25°C ID -40 A
On-resistance 1 RDSon1 0.015 Ω
@ ID -10 A
@ VGS -10 V
Drain current 100°C ID -25 A
On-resistance 2 RDSon2 0.02 Ω
@ ID -8 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 52 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM -160 A
@ tp 10000000 µs
Threshold voltage VGSth min -1 V
VGSth max -2.5 V
Turn-on delay time tD(on) 19 ns
Rise time tr 25 ns
Turn-off delay time tD(off) 26 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V) 59 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 9 nC
Single pulse avalanche energy Eas 51 mJ
Input capacitance Ciss 3538 pF
Output capacitance Coss 265 pF
Reverse transfer capacitance Crss 178 pF
Reverse recovery charge Qrr 7 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 2.4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 32 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 29.4 mA/V
Intrinsic gate resistance RGi 2.2 Ω

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