DI040P04D1-AQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI040P04D1-AQ MOSFET, DPAK, P, -40V, -40A, 15mΩ, 150°C, AEC-Q101
Minimum order quantity	2.500
Stock	10.000
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI040P04D1-AQ

Type	SMD
Package	TO-252AA/D-PAK
Qualification	AEC-Q101
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-40 V

Drain current 25°C	ID	-40 A
On-resistance 1	RDSon1	0.015 Ω
	@ ID	-10 A
	@ VGS	-10 V
Drain current 100°C	ID	-25 A
On-resistance 2	RDSon2	0.02 Ω
	@ ID	-8 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	52 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	-160 A
	@ tp	10000000 µs
Threshold voltage	VGSth min	-1 V
	VGSth max	-2.5 V
Turn-on delay time	tD(on)	19 ns
Rise time	tr	25 ns
Turn-off delay time	tD(off)	26 ns
Fall time	tf	4 ns
Total gate charge (10V)	Qg (10V)	59 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	9 nC
Single pulse avalanche energy	Eas	51 mJ
Input capacitance	Ciss	3538 pF
Output capacitance	Coss	265 pF
Reverse transfer capacitance	Crss	178 pF
Reverse recovery charge	Qrr	7 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.32 g
Marking	Marking	Type
Thermal resistance junction	RTH	2.4 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	32 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	29.4 mA/V
Intrinsic gate resistance	RGi	2.2 Ω