DI032N03PTK
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI032N03PTK Gate protected
MOSFET, PowerQFN 3x3, N, 30V, 32A, 5mΩ, 150°C
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI032N03PTK
DI032N03PTK Single Protected
Type SMD
Package PowerQFN 3x3
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 30 V
Drain current 25°C ID 32 A
On-resistance 1 RDSon1 0.005 Ω
@ ID 20 A
@ VGS 10 V
Drain current 100°C ID 32 A
On-resistance 2 RDSon2 0.0072 Ω
@ ID 20 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 28 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 115 A
@ tp 10000 µs
Threshold voltage VGSth min 1 V
VGSth max 2.5 V
Turn-on delay time tD(on) 7 ns
Rise time tr 9 ns
Turn-off delay time tD(off) 40 ns
Fall time tf 11 ns
Total gate charge (10V) Qg (10V) 38 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 12 nC
Single pulse avalanche energy Eas 45 mJ
Input capacitance Ciss 2300 pF
Output capacitance Coss 240 pF
Reverse transfer capacitance Crss 210 pF
Reverse recovery charge Qrr 15 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking tbd
Thermal resistance junction RTH 4.5 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 55 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 10 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2500 V
Forward transconductance gfs 100 mA/V
Intrinsic gate resistance RGi 2.5 Ω

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