DI028N10PQ2
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI028N10PQ2
MOSFET, PowerQFN 5x6-Dual, N+N, 100V, 28A
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI028N10PQ2
DI028N10PQ2 Dual
Type SMD
Package PowerQFN 5x6-Dual
Qualification Industrial Grade
Config Dual
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N+N
Drain source voltage VDS 100 V
Drain current 25°C ID 28 A
On-resistance 1 RDSon1 0.021 Ω
@ ID 7 A
@ VGS 10 V
Drain current 100°C ID 18 A
On-resistance 2 RDSon2 0.026 Ω
@ ID 5 A
@ VGS 4.5 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 28 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 130 A
@ tp 10000 µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 12 ns
Rise time tr 3.5 ns
Turn-off delay time tD(off) 11 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V) 22 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 6 nC
Single pulse avalanche energy Eas 15 mJ
Input capacitance Ciss 1028 pF
Output capacitance Coss 170 pF
Reverse transfer capacitance Crss 7 pF
Reverse recovery charge Qrr 30 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking 610N170
Thermal resistance junction RTH 3.8 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 80 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 80 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 15.8 mA/V
Intrinsic gate resistance RGi 0.6 Ω

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