DI015P10PT-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI015P10PT-AQ
MOSFET, PowerQFN 3x3, P, -100V, -15A, 110mΩ, 175°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI015P10PT-AQ
DI015P10PT-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive Yes
MSL 3
 
ESD protection ESD protected No
Polarity pol P
Drain source voltage VDS -100 V
Drain current 25°C ID -15 A
On-resistance 1 RDSon1 0.11 Ω
@ ID -10 A
@ VGS -10 V
Drain current 100°C ID -10 A
On-resistance 2 RDSon2 0.12 Ω
@ ID -5 A
@ VGS -4.5 V
Junction temperature Tjmin -55 °C
Tjmax 175 °C
Power dissipation Ptot 35 W
@ TLoc 25 °C
Location Junction
Avalanche Yes
Peak drain current IDM -35 A
@ tp 100 µs
Threshold voltage VGSth min -1.2 V
VGSth max -2.5 V
Turn-on delay time tD(on) 25 ns
Rise time tr 35 ns
Turn-off delay time tD(off) 145 ns
Fall time tf 90 ns
Total gate charge (10V) Qg (10V) 50 nC
Total gate charge (4.5V) Qg (4.5V) 0 nC
Gate-drain charge Qgd 9 nC
Single pulse avalanche energy Eas 72 mJ
Input capacitance Ciss 4292 pF
Output capacitance Coss 114 pF
Reverse transfer capacitance Crss 88 pF
Reverse recovery charge Qrr 145 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 4.2 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 62.5 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 175 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 20 V
Drain source leakage current IDSS 1 µA
@ VDS 100 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs TBA mA/V
Intrinsic gate resistance RGi TBA Ω

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