DI013N70D1
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI013N70D1
MOSFET, DPAK, N, 700V, 13A, 0.36Ω, 150°C
Minimum order quantity 2.500
Stock 0
Customs Tariff Number 85412900
RoHS compliant with exemption 7(a)-I
REACH declarable
Lead free No
Halogen free No

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Technical data

Article number DI013N70D1
DI013N70D1 Single
Type SMD
Package TO-252AA/D-PAK
Qualification Industrial Grade
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 700 V
Drain current 25°C ID 13 A
On-resistance 1 RDSon1 0.36 Ω
@ ID 3 A
@ VGS 10 V
Drain current 100°C ID 8 A
On-resistance 2 RDSon2 null Ω
@ ID null A
@ VGS nul V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 128 W
@ TLoc 25 °C
Location Contact
Avalanche No
Peak drain current IDM 52 A
@ tp null µs
Threshold voltage VGSth min 3 V
VGSth max 4 V
Turn-on delay time tD(on) 20 ns
Rise time tr 26 ns
Turn-off delay time tD(off) 105 ns
Fall time tf 32 ns
Total gate charge (10V) Qg (10V) 25.9 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 14 nC
Single pulse avalanche energy Eas 93 mJ
Input capacitance Ciss 742 pF
Output capacitance Coss 35 pF
Reverse transfer capacitance Crss 1 pF
Reverse recovery charge Qrr 2050 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.32 g
Marking Marking Type
Thermal resistance junction RTH 0.98 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 100 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 30 V
Drain source leakage current IDSS 1 µA
@ VDS 700 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi 9.3 Ω

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