DI005N03PWK
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI005N03PWK
MOSFET, PowerQFN 2x2, N, 30V, 5A, 33 mΩ, 150°C
Minimum order quantity 4.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI005N03PWK
DI005N03PWK Single Protected
Type SMD
Package PowerQFN 2x2
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 30 V
Drain current 25°C ID 5.000 A
On-resistance 1 RDSon1 0.03300 Ω
@ ID 5.000 A
@ VGS 4.5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.00000 Ω
@ ID 0.000 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 12.500 W
@ TLoc 25 °C
Location Junction
Avalanche No
Peak drain current IDM 12.000 A
@ tp 10 µs
Threshold voltage VGSth min 0.4 V
VGSth max 1.1 V
Turn-on delay time tD(on) 7 ns
Rise time tr 16 ns
Turn-off delay time tD(off) 32 ns
Fall time tf 31 ns
Total gate charge (10V) Qg (10V) 18.4 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 1.9 nC
Single pulse avalanche energy Eas 0.0 mJ
Input capacitance Ciss 1140 pF
Output capacitance Coss 105 pF
Reverse transfer capacitance Crss 82 pF
Reverse recovery charge Qrr 0.0 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.05 g
Marking Marking 0
Thermal resistance junction RTH 62.5 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 270.0 K/W
Location Ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0 µA
@ VGS 0 V
Drain source leakage current IDSS 0 µA
@ VDS 0 V
Gate source voltage DC VGSS 12 V
Gate source voltage ESD VGSS 1000 V
Forward transconductance gfs 30 mA/V
Intrinsic gate resistance RGi null Ω

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