DI001N65PTK-AQ
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI001N65PTK-AQ
MOSFET, PowerQFN 3x3, N, 650V, 1A, 1.6Ω, 150°C, AEC-Q101
Minimum order quantity 5.000
Stock 0
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number DI001N65PTK-AQ
DI001N65PTK-AQ Single
Type SMD
Package PowerQFN 3x3
Qualification AEC-Q101
Config Single
Life Cycle engineering sample
ESD sensitive No
MSL 3
 
ESD protection ESD protected Yes
Polarity pol N
Drain source voltage VDS 650 V
Drain current 25°C ID 1 A
On-resistance 1 RDSon1 1.6 Ω
@ ID 1 A
@ VGS 10 V
Drain current 100°C ID 0.63 A
On-resistance 2 RDSon2 1.4 Ω
@ ID 1 A
@ VGS 10 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 32.2 W
@ TLoc 25 °C
Location Contact
Avalanche Yes
Peak drain current IDM 4 A
@ tp null µs
Threshold voltage VGSth min 1.2 V
VGSth max 2.5 V
Turn-on delay time tD(on) 9 ns
Rise time tr 11 ns
Turn-off delay time tD(off) 19 ns
Fall time tf 86 ns
Total gate charge (10V) Qg (10V) 5.8 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas 19.3 mJ
Input capacitance Ciss 209 pF
Output capacitance Coss 12 pF
Reverse transfer capacitance Crss 5 pF
Reverse recovery charge Qrr 498 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.1 g
Marking Marking Type
Thermal resistance junction RTH 4 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 50 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 1 µA
@ VGS 16 V
Drain source leakage current IDSS 1 µA
@ VDS 520 V
Gate source voltage DC VGSS 20 V
Gate source voltage ESD VGSS 2 V
Forward transconductance gfs 2.2 mA/V
Intrinsic gate resistance RGi 5 Ω

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