DI001N60U
MOSFETs (Field Effect Transistors)

Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description DI001N60U
MOSFET, SOT-89, N, 600V, 1A, 15Ω, 150°C
Minimum order quantity 1.000
Stock 1.000
Customs Tariff Number 85412900
RoHS compliant
REACH not declarable
Lead free No
Halogen free No

Distributor Availability

Technical data

Article number DI001N60U
DI001N60U single NFET without Pin
Type SMD
Package SOT-89
Qualification Industrial Grade
Config single NFET without Pin
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 600 V
Drain current 25°C ID 1 A
On-resistance 1 RDSon1 15
@ ID 0.5 A
@ VGS 10 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.055
@ ID 0 A
@ VGS 0 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 8 W
@ TLoc 25 °C
Location Junction
Avalanche Yes
Peak drain current IDM 0 A
@ tp null µs
Threshold voltage VGSth min 2 V
VGSth max 4 V
Turn-on delay time tD(on) 3 ns
Rise time tr 16 ns
Turn-off delay time tD(off) 10 ns
Fall time tf 36 ns
Total gate charge (10V) Qg (10V) 7.8 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 1 nC
Single pulse avalanche energy Eas 3.5 mJ
Input capacitance Ciss 128 pF
Output capacitance Coss 18 pF
Reverse transfer capacitance Crss 3 pF
Reverse recovery charge Qrr 400 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.04 g
Marking Marking Type
Thermal resistance junction RTH 150 K/W
Location case
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH 15.6 K/W
Location ambient
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 30 V
Drain source leakage current IDSS 10 µA
@ VDS 600 V
Gate source voltage DC VGSS 30 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs null mA/V
Intrinsic gate resistance RGi null

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