BSS806N
MOSFETs (Field Effect Transistors)

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Product information

Product family MOSFETs (Field Effect Transistors)
(Power) switches, signal processing, polarity protection
Article description BSS806N
MOSFET, SOT-23, N, 20V, 2.3A, 57mΩ, 150°C
Minimum order quantity 3.000
Stock 0
Customs Tariff Number 85412100
RoHS compliant
REACH not declarable
Lead free Yes
Halogen free Yes

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Technical data

Article number BSS806N
BSS806N Single Protected
Type SMD
Package SOT-23
Qualification Industrial Grade
Config Single Protected
Life Cycle engineering sample
ESD sensitive No
MSL 1
 
ESD protection ESD protected No
Polarity pol N
Drain source voltage VDS 20 V
Drain current 25°C ID 2.3 A
On-resistance 1 RDSon1 0.057 Ω
@ ID 2.3 A
@ VGS 2.5 V
Drain current 100°C ID null A
On-resistance 2 RDSon2 0.082 Ω
@ ID 1.3 A
@ VGS 1.8 V
Junction temperature Tjmin -55 °C
Tjmax 150 °C
Power dissipation Ptot 0.5 W
@ TLoc 25 °C
Location null
Avalanche No
Peak drain current IDM 15 A
@ tp null µs
Threshold voltage VGSth min 1.5 V
VGSth max 2.5 V
Turn-on delay time tD(on) 8 ns
Rise time tr 10 ns
Turn-off delay time tD(off) 12 ns
Fall time tf 4 ns
Total gate charge (10V) Qg (10V) 1.7 nC
Total gate charge (4.5V) Qg (4.5V) null nC
Gate-drain charge Qgd 2 nC
Single pulse avalanche energy Eas 10.8 mJ
Input capacitance Ciss 370 pF
Output capacitance Coss 118 pF
Reverse transfer capacitance Crss 20 pF
Reverse recovery charge Qrr 3.3 nC
Case flammability UL94-V0 Yes
Net weight mnet 0.01 g
Marking Marking TBA
Thermal resistance junction RTH 250 K/W
Location ambient
UL recognized UL-Recognition null
Thermal resistance junction (b) RTH null K/W
Location null
Storage temperature Tsmin -55 °C
Tsmax 150 °C
Solder & Assembly Solder & Assembly 260°/10s
Gate source leakage current IGSS 0.1 µA
@ VGS 8 V
Drain source leakage current IDSS 1 µA
@ VDS 20 V
Gate source voltage DC VGSS 8 V
Gate source voltage ESD VGSS null V
Forward transconductance gfs 9 mA/V
Intrinsic gate resistance RGi null Ω

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