MMFTP3936KT
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP3936KT MOSFET, SOT-723, P, -20V, -0.33A, 1.1Ω, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTP3936KT

Type	SMD
Package	SOT-523
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	P
Drain source voltage	VDS	-20 V

Drain current 25°C	ID	-0.330 A
On-resistance 1	RDSon1	1.10000 Ω
	@ ID	-0.100 A
	@ VGS	-4.5 V
Drain current 100°C	ID	0.000 A
On-resistance 2	RDSon2	2.80000 Ω
	@ ID	-0.030 A
	@ VGS	-5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.150 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	-0.660 A
	@ tp	100 µs
Threshold voltage	VGSth min	-0.3 V
	VGSth max	-1.0 V
Turn-on delay time	tD(on)	92 ns
Rise time	tr	0 ns
Turn-off delay time	tD(off)	220 ns
Fall time	tf	0 ns
Total gate charge (10V)	Qg (10V)	0.0 nC
Total gate charge (4.5V)	Qg (4.5V)	1.5 nC
Gate-drain charge	Qgd	0.4 nC
Single pulse avalanche energy	Eas	0.0 mJ
Input capacitance	Ciss	48 pF
Output capacitance	Coss	12 pF
Reverse transfer capacitance	Crss	7 pF
Reverse recovery charge	Qrr	0.0 nC
Case flammability	UL94-V0	No
Net weight	mnet
Marking	Marking
Thermal resistance junction	RTH
	Location
UL recognized	UL-Recognition
Thermal resistance junction (b)	RTH
	Location
Storage temperature	Tsmin
	Tsmax
Solder & Assembly	Solder & Assembly
Gate source leakage current	IGSS
	@ VGS
Drain source leakage current	IDSS
	@ VDS
Gate source voltage DC	VGSS	8 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	0 mA/V
Intrinsic gate resistance	RGi