MMFTP2318KWV
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MMFTP2318KWV MOSFET, SOT-723, P, -20V, -0.4A, 600 mΩ, 150°C
Minimum order quantity	3.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MMFTP2318KWV

Type	SMD
Package	SOT-723
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	Yes
Polarity	pol	P
Drain source voltage	VDS	-20 V

Drain current 25°C	ID	-0.400 A
On-resistance 1	RDSon1	0.60000 Ω
	@ ID	-0.300 A
	@ VGS	-4.5 V
Drain current 100°C	ID	-0.250 A
On-resistance 2	RDSon2	3.00000 Ω
	@ ID	-0.100 A
	@ VGS	-1.2 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.275 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	-0.400 A
	@ tp
Threshold voltage	VGSth min	-0.3 V
	VGSth max	-1.0 V
Turn-on delay time	tD(on)	16 ns
Rise time	tr	10 ns
Turn-off delay time	tD(off)	60 ns
Fall time	tf	36 ns
Total gate charge (10V)	Qg (10V)
Total gate charge (4.5V)	Qg (4.5V)	2.0 nC
Gate-drain charge	Qgd	4 nC
Single pulse avalanche energy	Eas	0.0 mJ
Input capacitance	Ciss	40 pF
Output capacitance	Coss	15 pF
Reverse transfer capacitance	Crss	7 pF
Reverse recovery charge	Qrr	8.5 nC
Case flammability	UL94-V0	No
Net weight	mnet
Marking	Marking
Thermal resistance junction	RTH
	Location
UL recognized	UL-Recognition
Thermal resistance junction (b)	RTH
	Location
Storage temperature	Tsmin
	Tsmax
Solder & Assembly	Solder & Assembly
Gate source leakage current	IGSS
	@ VGS
Drain source leakage current	IDSS
	@ VDS
Gate source voltage DC	VGSS
Gate source voltage ESD	VGSS
Forward transconductance	gfs
Intrinsic gate resistance	RGi