MDE0A75C020K
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	MDE0A75C020K MOSFET, SOT-563 Dual, N+P, 20 V, 0.75A, 0.38 Ω, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	MDE0A75C020K

Type	SMD
Package	SOT-563
Qualification	Industrial Grade
Config	Dual protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	N+P
Drain source voltage	VDS	20 V

Drain current 25°C	ID	0.75 A
On-resistance 1	RDSon1	0.38 Ω
	@ ID	0.66 A
	@ VGS	4.5 V
Drain current 100°C	ID	3 A
On-resistance 2	RDSon2	0.52 Ω
	@ ID	-0.66 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.38 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	3 A
	@ tp	null µs
Threshold voltage	VGSth min	0.4 V
	VGSth max	1.1 V
Turn-on delay time	tD(on)	4 ns
Rise time	tr	2 ns
Turn-off delay time	tD(off)	17 ns
Fall time	tf	2 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	1 nC
Gate-drain charge	Qgd	0.3 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	54 pF
Output capacitance	Coss	11 pF
Reverse transfer capacitance	Crss	7 pF
Reverse recovery charge	Qrr	null nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.01 g
Marking	Marking	TBA
Thermal resistance junction	RTH	329 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	10 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	10 V
Gate source voltage ESD	VGSS	TBA V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	TBA Ω