DI7A6N10SQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI7A6N10SQ MOSFET, SO-8, N, 100V, 7.6A, 20mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI7A6N10SQ

Type	SMD
Package	SO-8
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	100 V

Drain current 25°C	ID	7.6 A
On-resistance 1	RDSon1	0.02 Ω
	@ ID	7.5 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.028 Ω
	@ ID	6.8 A
	@ VGS	6 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	2.5 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	Yes
Peak drain current	IDM	200 A
	@ tp	10000 µs
Threshold voltage	VGSth min	2 V
	VGSth max	4 V
Turn-on delay time	tD(on)	14 ns
Rise time	tr	20 ns
Turn-off delay time	tD(off)	37 ns
Fall time	tf	27 ns
Total gate charge (10V)	Qg (10V)	22 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	6 nC
Single pulse avalanche energy	Eas	416 mJ
Input capacitance	Ciss	1650 pF
Output capacitance	Coss	330 pF
Reverse transfer capacitance	Crss	70 pF
Reverse recovery charge	Qrr	90 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	50 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	10 µA
	@ VDS	80 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	null Ω