DI4A7P06SQ2
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI4A7P06SQ2 MOSFET, SO-8, P+P, -60V, -4.7A, 75mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI4A7P06SQ2

Type	SMD
Package	SO-8
Qualification	Industrial Grade
Config	Dual
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P+P
Drain source voltage	VDS	-60 V

Drain current 25°C	ID	-4.7 A
On-resistance 1	RDSon1	0.075 Ω
	@ ID	-5 A
	@ VGS	-10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0 Ω
	@ ID	0 A
	@ VGS	0 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	3 W
	@ TLoc	25 °C
	Location	Terminal
Avalanche	No
Peak drain current	IDM	-30 A
	@ tp	null µs
Threshold voltage	VGSth min	-1.3 V
	VGSth max	-2.3 V
Turn-on delay time	tD(on)	0 ns
Rise time	tr	6 ns
Turn-off delay time	tD(off)	0 ns
Fall time	tf	13 ns
Total gate charge (10V)	Qg (10V)	8.5 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	1.5 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	80 pF
Output capacitance	Coss	80 pF
Reverse transfer capacitance	Crss	3.9 pF
Reverse recovery charge	Qrr	105 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	1 g
Marking	Marking	Type
Thermal resistance junction	RTH	42 K/W
	Location	terminal
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	80 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	60 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	null Ω