DI4A5C06SQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI4A5C06SQ Complementary MOSFET MOSFET, SO-8, N+P, 60V, 4.5A, 55mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI4A5C06SQ

Type	SMD
Package	SO-8
Qualification	Industrial Grade
Config	Dual
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N+P
Drain source voltage	VDS	60 V

Drain current 25°C	ID	4.5 A
On-resistance 1	RDSon1	0.055 Ω
	@ ID	4.5 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.075 Ω
	@ ID	4 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	1.6 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	No
Peak drain current	IDM	20 A
	@ tp	null µs
Threshold voltage	VGSth min	1 V
	VGSth max	3 V
Turn-on delay time	tD(on)	11 ns
Rise time	tr	8 ns
Turn-off delay time	tD(off)	19 ns
Fall time	tf	6 ns
Total gate charge (10V)	Qg (10V)	12.5 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	2 nC
Single pulse avalanche energy	Eas	null mJ
Input capacitance	Ciss	650 pF
Output capacitance	Coss	80 pF
Reverse transfer capacitance	Crss	35 pF
Reverse recovery charge	Qrr	4 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	40 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	78 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	48 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	14 mA/V
Intrinsic gate resistance	RGi	null Ω