DI300N15TL
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI300N15TL MOSFET, TOLL, N, 150V, 300A, 3.9mΩ, 175°C
Minimum order quantity	2.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant with exemption
REACH	not declarable
Lead free	No
Halogen free	Yes

Article number	DI300N15TL

Type	SMD
Package	HSOF-8/TOLL
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	150 V

Drain current 25°C	ID	300 A
On-resistance 1	RDSon1	0.0039 Ω
	@ ID	20 A
	@ VGS	10 V
Drain current 100°C	ID	0 A
On-resistance 2	RDSon2	null Ω
	@ ID	null A
	@ VGS	null V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	600 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	Yes
Peak drain current	IDM	1060 A
	@ tp	null µs
Threshold voltage	VGSth min	2.5 V
	VGSth max	4.5 V
Turn-on delay time	tD(on)	48 ns
Rise time	tr	92 ns
Turn-off delay time	tD(off)	93 ns
Fall time	tf	59 ns
Total gate charge (10V)	Qg (10V)	89 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	17 nC
Single pulse avalanche energy	Eas	900 mJ
Input capacitance	Ciss	8720 pF
Output capacitance	Coss	4170 pF
Reverse transfer capacitance	Crss	207 pF
Reverse recovery charge	Qrr	279 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	2 g
Marking	Marking	Type
Thermal resistance junction	RTH	0.25 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	175 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	-55 µA
	@ VGS	175 V
Drain source leakage current	IDSS	0.1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	1 V
Gate source voltage ESD	VGSS	150 V
Forward transconductance	gfs	12 mA/V
Intrinsic gate resistance	RGi	5 Ω