DI120N04PT
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI120N04PT MOSFET, PowerQFN 3x3, N, 40V, 120A, 2.8mΩ, 150°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	No

Article number	DI120N04PT

Type	SMD
Package	PowerQFN 3x3
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	40 V

Drain current 25°C	ID	120.000 A
On-resistance 1	RDSon1	0.00280 Ω
	@ ID	20.000 A
	@ VGS	10 V
Drain current 100°C	ID	76.000 A
On-resistance 2	RDSon2	0.00380 Ω
	@ ID	15.000 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	65.700 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	480.000 A
	@ tp	100 µs
Threshold voltage	VGSth min	1.2 V
	VGSth max	2.2 V
Turn-on delay time	tD(on)	10 ns
Rise time	tr	9 ns
Turn-off delay time	tD(off)	31 ns
Fall time	tf	10 ns
Total gate charge (10V)	Qg (10V)	42.6 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	7.2 nC
Single pulse avalanche energy	Eas	180.0 mJ
Input capacitance	Ciss	2625 pF
Output capacitance	Coss	560 pF
Reverse transfer capacitance	Crss	35 pF
Reverse recovery charge	Qrr	18.4 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	1.9 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	40.0 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	22 mA/V
Intrinsic gate resistance	RGi	1.0 Ω