DI0A6N02PGK
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI0A6N02PGK MOSFET, DFN1006-3, N, 20V, 0.6A, 0.62Ω, 150°C
Minimum order quantity	10.000
Stock	0
Customs Tariff Number	85412100
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI0A6N02PGK

Type	SMD
Package	DFN1006-3
Qualification	Industrial Grade
Config	Single Protected
Life Cycle	engineering sample
ESD sensitive	No
MSL	1

ESD protection	ESD protected	Yes
Polarity	pol	N
Drain source voltage	VDS	20 V

Drain current 25°C	ID	0.6 A
On-resistance 1	RDSon1	0.62 Ω
	@ ID	0.6 A
	@ VGS	4.5 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.85 Ω
	@ ID	0.5 A
	@ VGS	2.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	0.45 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	2.5 A
	@ tp	null µs
Threshold voltage	VGSth min	0.4 V
	VGSth max	1 V
Turn-on delay time	tD(on)	6 ns
Rise time	tr	9 ns
Turn-off delay time	tD(off)	19 ns
Fall time	tf	51 ns
Total gate charge (10V)	Qg (10V)	0 nC
Total gate charge (4.5V)	Qg (4.5V)	0.4 nC
Gate-drain charge	Qgd	0.1 nC
Single pulse avalanche energy	Eas	0 mJ
Input capacitance	Ciss	21 pF
Output capacitance	Coss	5 pF
Reverse transfer capacitance	Crss	4 pF
Reverse recovery charge	Qrr	0 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.001 g
Marking	Marking	58G
Thermal resistance junction	RTH	278 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	10 µA
	@ VGS	10 V
Drain source leakage current	IDSS	1 µA
	@ VDS	20 V
Gate source voltage DC	VGSS	10 V
Gate source voltage ESD	VGSS	2000 V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	100 Ω