DI065N02PT
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI065N02PT MOSFET, PowerQFN 3x3, N, 20 V, 65 A, 5 mΩ, 175°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI065N02PT

Type	SMD
Package	PowerQFN 3x3
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	20 V

Drain current 25°C	ID	65 A
On-resistance 1	RDSon1	0.005 Ω
	@ ID	20 A
	@ VGS	4.5 V
Drain current 100°C	ID	46 A
On-resistance 2	RDSon2	0.0065 Ω
	@ ID	15 A
	@ VGS	2.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	175 °C
Power dissipation	Ptot	30 W
	@ TLoc	25 °C
	Location	Junction
Avalanche	No
Peak drain current	IDM	260 A
	@ tp	null µs
Threshold voltage	VGSth min	0.4 V
	VGSth max	1 V
Turn-on delay time	tD(on)	20 ns
Rise time	tr	65 ns
Turn-off delay time	tD(off)	26 ns
Fall time	tf	7 ns
Total gate charge (10V)	Qg (10V)	0 nC
Total gate charge (4.5V)	Qg (4.5V)	26 nC
Gate-drain charge	Qgd	10 nC
Single pulse avalanche energy	Eas	132 mJ
Input capacitance	Ciss	2334 pF
Output capacitance	Coss	410 pF
Reverse transfer capacitance	Crss	373 pF
Reverse recovery charge	Qrr	45 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	null g
Marking	Marking	null
Thermal resistance junction	RTH	null K/W
	Location	null
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	null °C
	Tsmax	null °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	null µA
	@ VGS	null V
Drain source leakage current	IDSS	null µA
	@ VDS	null V
Gate source voltage DC	VGSS	null V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	null Ω