DI050P02PT
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI050P02PT MOSFET, PowerQFN 3x3, P, -20V, -50A, 10mΩ, 150°C
Minimum order quantity	5.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI050P02PT

Type	SMD
Package	PowerQFN 3x3
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-20 V

Drain current 25°C	ID	-50 A
On-resistance 1	RDSon1	0.01 Ω
	@ ID	-15 A
	@ VGS	-10 V
Drain current 100°C	ID	-31 A
On-resistance 2	RDSon2	0.013 Ω
	@ ID	-8 A
	@ VGS	-4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	35.7 W
	@ TLoc	25 °C
	Location	Contact
Avalanche	Yes
Peak drain current	IDM	-180 A
	@ tp	100 µs
Threshold voltage	VGSth min	-0.3 V
	VGSth max	-1 V
Turn-on delay time	tD(on)	28 ns
Rise time	tr	67 ns
Turn-off delay time	tD(off)	41 ns
Fall time	tf	5 ns
Total gate charge (10V)	Qg (10V)	102 nC
Total gate charge (4.5V)	Qg (4.5V)	null nC
Gate-drain charge	Qgd	13 nC
Single pulse avalanche energy	Eas	54 mJ
Input capacitance	Ciss	4596 pF
Output capacitance	Coss	546 pF
Reverse transfer capacitance	Crss	449 pF
Reverse recovery charge	Qrr	8 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	302P100
Thermal resistance junction	RTH	3.5 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	45 K/W
	Location	ambient
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	12 V
Drain source leakage current	IDSS	1 µA
	@ VDS	16 V
Gate source voltage DC	VGSS	12 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	36 mA/V
Intrinsic gate resistance	RGi	2 Ω