DI025P02PW
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI025P02PW MOSFET, PowerQFN 2x2, P, -20V, -25A, 10mΩ, 150°C
Minimum order quantity	4.000
Stock	0
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	No
Halogen free	Yes

Article number	DI025P02PW

Type	SMD
Package	PowerQFN 2x2
Qualification	Industrial Grade
Config	Single
Life Cycle	engineering sample
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	P
Drain source voltage	VDS	-20 V

Drain current 25°C	ID	-25 A
On-resistance 1	RDSon1	0.01 Ω
	@ ID	-20 A
	@ VGS	-4.5 V
Drain current 100°C	ID	-16 A
On-resistance 2	RDSon2	0.015 Ω
	@ ID	-15 A
	@ VGS	-2.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	18 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	No
Peak drain current	IDM	-100 A
	@ tp	null µs
Threshold voltage	VGSth min	-0.4 V
	VGSth max	-1 V
Turn-on delay time	tD(on)	12 ns
Rise time	tr	40 ns
Turn-off delay time	tD(off)	30 ns
Fall time	tf	10 ns
Total gate charge (10V)	Qg (10V)	null nC
Total gate charge (4.5V)	Qg (4.5V)	24.7 nC
Gate-drain charge	Qgd	7 nC
Single pulse avalanche energy	Eas	68 mJ
Input capacitance	Ciss	1909 pF
Output capacitance	Coss	356 pF
Reverse transfer capacitance	Crss	340 pF
Reverse recovery charge	Qrr	0 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.05 g
Marking	Marking	Type
Thermal resistance junction	RTH	7 K/W
	Location	case
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	10 V
Drain source leakage current	IDSS	1 µA
	@ VDS	16 V
Gate source voltage DC	VGSS	10 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	null mA/V
Intrinsic gate resistance	RGi	11 Ω