DI014N03SQ
MOSFETs (Field Effect Transistors)

Product information

Product family	MOSFETs (Field Effect Transistors) (Power) switches, signal processing, polarity protection
Article description	DI014N03SQ MOSFET, SO-8, N, 30V, 14A, 8mΩ, 150°C
Minimum order quantity	4.000
Stock	60.000
Customs Tariff Number	85412900
RoHS	compliant
REACH	not declarable
Lead free	Yes
Halogen free	Yes

Article number	DI014N03SQ

Type	SMD
Package	SO-8
Qualification	Industrial Grade
Config	Single
Life Cycle	active
ESD sensitive	No
MSL	3

ESD protection	ESD protected	No
Polarity	pol	N
Drain source voltage	VDS	30 V

Drain current 25°C	ID	14 A
On-resistance 1	RDSon1	0.008 Ω
	@ ID	14 A
	@ VGS	10 V
Drain current 100°C	ID	null A
On-resistance 2	RDSon2	0.011 Ω
	@ ID	11 A
	@ VGS	4.5 V
Junction temperature	Tjmin	-55 °C
	Tjmax	150 °C
Power dissipation	Ptot	2.8 W
	@ TLoc	25 °C
	Location	ambient
Avalanche	Yes
Peak drain current	IDM	64 A
	@ tp	null µs
Threshold voltage	VGSth min	1 V
	VGSth max	2 V
Turn-on delay time	tD(on)	n ns
Rise time	tr	5 ns
Turn-off delay time	tD(off)	23 ns
Fall time	tf	7 ns
Total gate charge (10V)	Qg (10V)	25 nC
Total gate charge (4.5V)	Qg (4.5V)
Gate-drain charge	Qgd	4 nC
Single pulse avalanche energy	Eas	45 mJ
Input capacitance	Ciss	1360 pF
Output capacitance	Coss	175 pF
Reverse transfer capacitance	Crss	130 pF
Reverse recovery charge	Qrr	3 nC
Case flammability	UL94-V0	Yes
Net weight	mnet	0.1 g
Marking	Marking	Type
Thermal resistance junction	RTH	44.6 K/W
	Location	ambient
UL recognized	UL-Recognition	null
Thermal resistance junction (b)	RTH	null K/W
	Location	null
Storage temperature	Tsmin	-55 °C
	Tsmax	150 °C
Solder & Assembly	Solder & Assembly	260°/10s
Gate source leakage current	IGSS	0.1 µA
	@ VGS	20 V
Drain source leakage current	IDSS	1 µA
	@ VDS	30 V
Gate source voltage DC	VGSS	20 V
Gate source voltage ESD	VGSS	null V
Forward transconductance	gfs	28 mA/V
Intrinsic gate resistance	RGi	2.1 Ω